ISSN:
1436-5073
Keywords:
molecular ion implantation
;
silicon nitride layers
;
resonant nuclear reaction analysis
;
non-Rutherford RBS
;
nitrogen depth profile
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract 15N2 + molecular ions were implanted with 10keV (j=10 μA/cm2) under high vacuum conditions close to room temperature in 〈100〉 silicon (c-Si) to study the13N depth distributions, particularly the dependence of peak concentration and dose on the ion fluence. The analysis were performed by the resonant nuclear reaction15N(p, αγ)12C(NRA). A maximum peak concentration of 65 at.% was measured. Thin stoichiometric silicon nitride layers with a thickness of approx. 20 nm (15 at.% nitrogen at the specimen surface) were produced by this low-energy implantation of15N2 + ions with an ion fluence of 1.5·1017 ions/cm2. NRA analysis of 38 keV15N2 + and 19keV15N+ ion implantations were performed to compare the15N depth distributions. No significant changes in the depth distributions are measured, that means, the molecular15N2 + ions are already disintegrated passing the very first atomic layers of the sample during implantation. Non-Rutherford RBS with4He+ ions and 3.45 MeV was performed in order to confirm the results obtained by NRA.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01246204
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