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  • 1
    Electronic Resource
    Electronic Resource
    Superconducting behavior of high-T c YBa2Cu3O7 thin films with BaO impurity produced by pulsed laser deposition (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 709-713 
    Details
    ISSN: 1572-9605
    Keywords: YBa2Cu3O7 thin films ; critical current density ; pulsed laser deposition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We have investigated the superconducting behavior of high-T c YBa2Cu3O7 (YBCO) thin films containing BaO impure phase produced by pulsed laser deposition. The thin films were characterized by the standard four-probe method, X-ray diffraction (XRD), and scanning electron microscopy (SEM). XRD showed that all these thin films contained BaO impurity, with thec-axis normal to the surface of the substrates. The presence of impurity existed from substrate temperatureT s of 727 to 796°C. When these thin films with BaO impurity were measured under the magnetic fields, it was found that the critical current densityJ c increased slightly with increase in magnetic fieldB within the range ofB≤500 G, in the case ofB perpendicular to thec-axis of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00721652
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  • 2
    Electronic Resource
    Electronic Resource
    High-Quality YBa2Cu3O7−x Films with CeO2/YSZ Buffer Layers on 2-Inch Si Wafers Deposited by Pulsed Laser (1998)
    Springer
    Journal of superconductivity 11 (1998), S. 713-717 
    Details
    ISSN: 1572-9605
    Keywords: YBa2Cu3O7 ; films ; pulsed laser deposition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The pulsed laser deposition (PLD) process is shown for in situ reproducibly fabricating YBa2Cu3O7−x (YBCO) superconducting films with yttrium-stabilized zirconia (YSZ) and CeO2 buffer layers, nonsuperconducting crystalline YBa2Cu3O7−x (YBCO*) passivation layer, and silver contact film on 2-inch silicon wafers. Variations of less than ±7% in film thickness have been obtained for this multilayer growth over the whole wafer. The YBCO films on 2-inch silicon wafers have homogeneous superconducting properties with zero resistance temperature T c0 from 88.4 K to 88.9 K. and critical current density J c at 77 K and zero field from 2.5 × 106 to 7× 106 A/cm2. The YSZ, CeO2 and YBCO layers grow epitaxially on silicon wafers. Full widths at half maximum (FWHMs) of (113) reflections of 40 nm thick YBCO layer from φ-scan patterns are only 1.71° and 1.85° corresponding to the center and edge of the wafer, respectively. These results are very promising for developing high-quality high-T c superconducting devices on large-area silicon wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022684905380
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