ISSN:
1573-4854
Keywords:
porous silicon
;
optical absorption
;
theoretical modelling
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The optical properties of porous silicon (p-Si) are calculated from the electronic band structure obtained by means of an sp3s* tight-binding Hamiltonian and a supercell model, in which the pores are columns detched in crystalline silicon (c-Si). The disorder in the pore sizes and the undulation of the silicon wires are considered by the existence of arandom perturbative potential, which produces non-vertical interband transitions, otherwise forbidden. A typical interval around each k-vector (optical window), where non-vertical transitions make an important contribution, depends on the value of the disorder and its order of magnitude is given by l−1, where l is the localization length. The calculated absorption spectra are compared with experiments, showing good agreement.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009684131340
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