ALBERT

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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 9 (1975), S. 401-408 
    ISSN: 1573-4889
    Keywords: oxidation-sulfidation ; iron ; oxygen ; sulfur compounds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The following possible conditions for the simultaneous formation of oxide and sulfide on iron in oxygen and sulfur-containing gases are considered: (7) simultaneous thermodynamic stability of oxide and sulfide; (2) temporal changes in gas composition; (3) intermediary cracking of the oxide film; (4) solubility and diffusion of sulfur in the oxide (lattice diffusion); (5) kinetic conditions for simultaneous oxide and sulfide formation at the scale-gas interface.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 38 (1992), S. 425-464 
    ISSN: 1573-4889
    Keywords: oxidation mechanism ; TiAl ; TiAl alloys ; air ; oxygen ; nitridation ; Ti-Al-O phase diagram
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior of Ti36Al, Ti35Al-0.1C, Ti35Al-1.4V-0.1C, and Ti35 Al-5Nb-0.1C (mass-%) in air and oxygen has been studied between 700 and 1000°C with the major emphasis at 900°C. Generally an oxide scale consisting of two layers, an outward- and an inward-growing layer, formed. The outward-growing part of the scale consisted mainly of TiO2 (rutile), while the inward-growing part is composed of a mixture of TiO2 and α-Al2O3. A barrier layer of Al2O3 on TiAl between the inner and the outer part of the scale was visible for up to 300 hr. Under certain conditions, the Al2O3 barrier dissolved and re-precipitated in the outer TiO2 layer. This “shift” leads to an effect similar to breakaway oxidation. Only the alloy containing Nb formed a longlasting, protective Al2O3 layer, which was established at the metal/scale interface after an incubation period of 80–100 hr. During this time, Nb was enriched in the subsurface zone up to approximately 20 w/o. The growth of the oxide scale on TiAl-V obeyed a parabolic law, because no Al2O3 barrier layer formed; large Al2O3 particles were part of the outward-growing layer. A brittle α2-Ti3Al-layer rich in O formed beneath the oxide scale as a result of preferential Al oxidation particularly when oxidized in oxygen. Oxidation in air can lead also to formation of nitrides beneath the oxide scale. The nitridation can vary between the formation of isolated nitride particles and of a metal/Ti2AlN/ TiN/oxide, scale-layer system. Under certain conditions, nitride-layer formation seemed to favor protective Al2O23 formation at the metal/scale interface, however, in general nitridation was detrimental with the consequence that oxidation was generally more rapid in air than in oxygen.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 47 (1997), S. 139-203 
    ISSN: 1573-4889
    Keywords: oxidation ; MoSi2 ; TiSi2 ; air ; oxygen ; O and Si transport in SiO2
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior of two MoSi2 variants, one Mo-rich and one Si-rich, and TiSi2 was investigated between 1000 and 1400°C in air, oxygen and an 80/20-Ar/O2 mixture. A protective SiO2 scale develops on MoSi2 in all atmospheres in the temperature range investigated. The SiO2 modification changes around 1300°C from tridymite to cristobalite. This change in SiO2 modification seems to cause an enhanced formation of SiO2 and evaporation of MoO3. The SiO2 grows at the MoSi2-scale interface. In air a two-layer scale grows on TiSi2 between about 1000 and 1200°C with an inner inwards growing fine-grain mixture of SiO2 + TiO2 and an outer outward-growing TiO2 partial layer. TiN formation in the transient oxidation is responsible for the formation of the inner mixed partial layer because in N -free atmospheres a scale of a SiO2 matrix with some Ti oxide precipitates inside is formed. A one-layer scale structure similar as that in N-free atmosphere is found on TiSi2 in air at T 〉 1200°C. In oxygen the TiO2 precipitates grow as needles mostly oriented perpendicular to the surface. Due to the faster oxygen transport in TiO2 compared with SiO2, these TiO2 needles act as “oxygen pipes,” causing an enhanced oxidation of TiSi2 in front of these needles. The SiO2 scale dissolves about 1–2% TiO2. This doping causes a mixed oxygenand Si transport with the consequence that the SiO2 scale on TiSi2 grows partly by oxygen transport inwards and Si transport outwards. The SiO2 modification is cristobalite over the entire temperature range investigated.
    Type of Medium: Electronic Resource
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