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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 46 (1996), S. 399-422 
    ISSN: 1573-4889
    Keywords: tarnishing of lead ; lead-iodide film ; Wagner's parabolic law ; hole transport ; ion transport ; shorting-circuitry attachment
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The tarnishing rate of Pb with iodine vapor in the temperature and pressure ranges of 423–523 K and 0.615–6.578 kPa, respectively, have been studied. The film-growth kinetics follow the parabolic law. The iodine-vapor-pressure dependence of the isothermal parabolic rate constant has been observed to be kP∝p I2 1/2 which is explained on the basis of the migration of electron holes across the film as the rate-limiting step. The activation energy value for iodination of Pb under normal conditions in an iodine pressure of 0.615 kPa is estimated to be 64 kJ·mol−1. In contrast, the rate of iodide-film growth has been found to increase considerably under a short-circuit mode of experiments. Such observations have been explained with the help of ion migration as the rate-limiting step for the film-growth process. The iodine-pressure dependence of the rate constant under short-circuit conditions is found to be kP∝p I2 1/3 associated with an activation energy of 51 kJ·mol−1. Results of the present study have been explained assuming Schottky-Wagner-type point defects in the lead-iodide film, where an equivalent number of vacancies in the cationic and anionic sublattices are present, and taking into account Wagner's electrochemical potential gradient as the main driving force for the film-growth process. The kinetics results have been substantiated through characterization of iodide films by SEM, EDS, EPMA, and XRD analyses.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 47 (1997), S. 295-315 
    ISSN: 1573-4889
    Keywords: lead-iodide film ; Wagner's parabolic law ; doping effect ; hole migration ; shortcircuit effect ; ion transport ; Schottky-Wagner defects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effect of a higher-valent dopant like Sb on the iodination rate of lead under normal and short-circuit conditions in iodine pressure of 0.615–6.578 kPa and in the temperature range of 423–523 K has been investigated. Like pure Pb, Sb-doped Pb also follows the parabolic law of film growth. The isothermal parabolic rate constants are found to be enhanced due to the presence of Sb. The iodine-vapor-pressure dependence of the isothermal parabolic rate constant has been observed to be kp∝pI 2 1/2 . This has been explained on the consideration of electron-hole migration across the film as the rate-limiting step. The activation energy for iodination of Sb-doped Pb under normal condition is estimated to be 64 kJ · mol−1 in an iodine pressure of 0.615 kPa. The rate of iodide-film growth has been found to increase considerably under a short-circuit mode of experiments. Such observations have been explained with the concept of ion migration as the rate-limiting step for the film-growth process. The iodine pressure dependence of rate constants under short-circuit conditions is observed to be kp∝I 2 1/3 , associated with an activation energy value of 51 kJ mol−1. The effect of putting additional resistances in series to the short-circuit Pt path during iodination of Sb-doped Pb is found to be similar to that observed for pure Pb. Results of the present study have been explained considering the prevalence of Schottky-Wagner type of point defects in the lead-iodide film. Wagner's electrochemical potential gradient has been confirmed to be the main driving force for the film-growth process. Iodide films have been characterized by SEM, EDS, EPMA, XRD, and AES analyses to substantiate the kinetics results.
    Type of Medium: Electronic Resource
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