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  • 1
    Electronic Resource
    Electronic Resource
    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs (2000)
    Springer
    Plasma chemistry and plasma processing 20 (2000), S. 417-427 
    Details
    ISSN: 1572-8986
    Keywords: ICP ; compound semiconductors ; interhalogens
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 for InP, 3.6 for InSb, 2.3 for InGaP, and 2.2 μm/min for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: The etch rates increased substantially with increasing ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than ICl/Ar, but the etched surface morphologies were fairly poor for both chemistries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007052629883
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  • 2
    Electronic Resource
    Electronic Resource
    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs (2000)
    Springer
    Plasma chemistry and plasma processing 20 (2000), S. 405-415 
    Details
    ISSN: 1572-8986
    Keywords: ICP ; compound semiconductors ; interhalogens
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both plamachemistries as a function of interhalogen percentage, while GaAs showedincreased etch rates with plasma composition in both chemistries. Etchrates of all materials increased substantially with increasing rf chuckpower, but rapidly decreased with chamber pressure. Selectivities 〉10 forGaAs and GaSb over AlGaAs were obtained in both chemistries. The etchedsurfaces of GaAs showed smooth morphology, which were somewhat better withICl/Ar than with IBr/Ar discharge. Auger Electron Spectroscopy analysisrevealed equirate of removal of group III and V components or thecorresponding etch products, maintaining the stoichiometry of the etchedsurface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007000613045
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    Paper (German National Licenses)
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