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Ultimate method for unambiguous identification of all donors in epitaxial GaAs and related compounds (1981)

Afsar, M. N. ; Button, Kenneth J. ; Cho, A. Y. ; [et al.]

Springer

International journal of infrared and millimeter waves 2 (1981), S. 1113-1121

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ISSN: 1572-9559

Keywords: semiconductors ; epitaxial GaAs ; impurities in semiconductors ; molecular beam epitaxy

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract When epitaxial GaAs is grown by the method of molecular beam epitaxy (mbe) it would be p-type unless it is intentionally doped lightly during growth by using a particular substitutional donor atom. We have chosen the tin donor in this case to render the specimen n-type. Then the conventional far infrared photoconductivity technique is used to observe the 1s to 2p transition of the electron of the tin donor. The identity of the donor, the energy of the quantum transition as a function of applied magnetic field intensity, and the line shape characteristics of that particular donor then become unquestionable.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01007077

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