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  • MX"2 electronic structures  (1)
  • crystal structure  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 50 (1989), S. 801-808 
    ISSN: 0022-3697
    Keywords: Layered transition metal dichalcogenides ; MX"2 electronic structures ; polytypes classification
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0044-2313
    Keywords: Lanthanum niobium selenides ; misfit layer compound ; crystal structure ; electronic properties ; Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Struktur und elektronische Transporteigenschaften der „Misfit“-Schichtverbindung (LaSe)1,14(NbSe2)2, „LaNb2Se5“.Die neue „Misfit“-Schichtverbindung (LaSe)1,14(NbSe2)2 wurde aus den Elementen bei 1050°C dargestellt und ihre Struktur in mehreren Teilschritten bestimmt. Die Struktur besteht aus einer alternierenden Stapelfolge von [LaSe]- und zwei [NbSe2]-Schichten in c-Richtung. Der „Misfit“ zwischen den zwei verschiedenen Schichten wird entlang der a-Richtung deutlich: a1(LaSe)=6,0191 Å und a2(NbSe2)=3,4372 Å, woraus sich ein Verhältnis von 1,751 ergibt, das 7/4 sehr nahe kommt. Der elektrische Widerstand wurde in Abhängigkeit von der Temperatur gemessen. Die Kristalle zeigen supraleitende Eigenschaften ab 5,3 K.
    Notes: The new misfit layer compound (LaSe)1.14(NbSe2)2 has been synthesized from the elements at 1050- and its structure has been determined by a composite approach. The structure has an alternating stacking sequence of [LaSe] and two [NbSe2] layers along the c direction. The misfit of the two different layers is occurring along the a direction: a1(LaSe)=6.0191 Å and a2(NbSe2)=3.4372 Å therefore yielding a ratio of 1.751 which is very close to 7/4. An investigation of electrical resistivity was done. The crystal shows superconducting properties at 5.3 K.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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