ISSN:
1572-8986
Keywords:
Plasma etching
;
electron cyclotron resonance
;
discharges in BCl3
;
additional RF biasing
;
selectivities
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract Electron cyclotron resonance (ECR) BCl3 discharges with additional rf biasing of the sample position have been used to etch a variety of III–V semiconductors. GaAs and AlxGa1−xAs (x = 0−1) etch at equal rates in BCl3 or BCl3/Ar discharges, whereas SF6 addition produces high selectivities for etching GaAs over AlGaAs. These selectivities are in excess of 600 for dc biases of ≤−150 V, and fall to ≤6 for biases of −300 V. If the dc biases are kept to ≤ − 100 V, there is no measurable degradation of the optical properties of the GaAs and AlGaAs. The AlF3 formed on the AlGaAs surface during exposure to BCl3/SF6 plasmas can be removed by sequential rinsing in dilute NH4OH and water. In-based materials (InP, InAs, InSb, InGaAs) etch at slow rates with relatively rough morphologies in BCl3 plasmas.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01466047
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