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  • VGA 410  (1)
  • 2015-2019  (1)
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    Publication Date: 2021-03-29
    Description: In order to describe texture and microstructure of a polycrystalline material completely, crystal orientation g={?1F?2} must be known in all points x={x1?x2?x3} of the material. This can be achieved by locationresolved diffraction of high-energy, i.e. short-wave, X-rays from synchrotron sources. Highest resolution in the orientation- as well as the location-coordinates can be achieved by three variants of a detector sweeping technique in which an area detector is continuously moved during exposure. This technique results in two-dimensionally continuous images which are sections and projections of the six-dimensional orientation location space. Further evaluation of these images depends on whether individual grains are resolved in them or not. Because of the high penetration depth of high-energy synchrotron radiation in matter, this technique is also, and particularly, suitable for the investigation of the interior of big samples.
    Keywords: 551 ; VAE 120 ; VKA 200 ; VGA 410 ; 38.03
    Language: English
    Type: article , publishedVersion
    Format: application/pdf
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