Publication Date:
2017-01-31
Description:
Author(s): B. Lei, N. Z. Wang, C. Shang, F. B. Meng, L. K. Ma, X. G. Luo, T. Wu, Z. Sun, Y. Wang, Z. Jiang, B. H. Mao, Z. Liu, Y. J. Yu, Y. B. Zhang, and X. H. Chen We have developed a field-effect transistor (FET) device using a solid ion conductor (SIC) as the gate dielectric, which can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes and consequently control the physical properties and phase transitions. A dome-shap… [Phys. Rev. B 95, 020503(R)] Published Mon Jan 30, 2017
Keywords:
Superfluidity and superconductivity
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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