Publication Date:
2016-06-10
Description:
Author(s): N. P. Hylton, T. F. Hinrichsen, A. R. Vaquero-Stainer, M. Yoshida, A. Pusch, M. Hopkinson, O. Hess, C. C. Phillips, and N. J. Ekins-Daukes This paper reports on the results of an investigation into the nature of photoluminescence upconversion at GaAs / InGa P 2 interfaces. Using a dual-beam excitation experiment, we demonstrate that the upconversion in our sample proceeds via a sequential two-photon optical absorption mechanism. Measuremen… [Phys. Rev. B 93, 235303] Published Thu Jun 09, 2016
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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