Publication Date:
2012-05-19
Description:
Author(s): A. M. Kolpak and S. Ismail-Beigi Phenomenological models suggest that thin epitaxial SrTiO 3 films on silicon will exhibit ferroelectric behavior as a result of compressive strain. However, such models do not include atomic-scale interface effects, which can dramatically alter the predicted behavior. In this paper, we use density fu... [Phys. Rev. B 85, 195318] Published Fri May 18, 2012
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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