Publication Date:
2014-06-10
Description:
Author(s): W. Pan, A. Serafin, J. S. Xia, L. Yin, N. S. Sullivan, K. W. Baldwin, K. W. West, L. N. Pfeiffer, and D. C. Tsui In this Rapid Communication we present the results from two high-quality, low-density GaAs quantum wells. In sample A of electron density n = 5.0 × 1010 cm−2, anisotropic electronic transport behavior was observed at ν = 7/2 in the second Landau level. We believe that the anisotropy is due to the la... [Phys. Rev. B 89, 241302] Published Mon Jun 09, 2014
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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