Publikationsdatum:
2015-09-16
Beschreibung:
Author(s): Yin-Long Han, Yue-Wen Fang, Zhen-Zhong Yang, Cheng-Jian Li, Lin He, Sheng-Chun Shen, Zhong-Zhong Luo, Guo-Liang Qu, Chang-Min Xiong, Rui-Fen Dou, Xiao Wei, Lin Gu, Chun-Gang Duan, and Jia-Cai Nie The interfacial atomic arrangement, which is different from that in the bulk form of the heterojunction, can induce a reconstruction of electrostatic field at the interface. For conventional semiconductor heterointerfaces, it is known that such reconstruction results in band bending, creating a quan… [Phys. Rev. B 92, 115304] Published Tue Sep 15, 2015
Schlagwort(e):
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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