Publication Date:
2014-03-28
Description:
Author(s): Hosung Seo, Richard C. Hatch, Patrick Ponath, Miri Choi, Agham B. Posadas, and Alexander A. Demkov Even with renewed interest in Ge as a competitor to Si in field-effect transistors, several key features of the surface electronic structure of Ge(001) have remained controversial. Notably, the origin of strong Fermi-level pinning in Ge has been heavily debated. Using high-resolution angle-resolved ... [Phys. Rev. B 89, 115318] Published Thu Mar 27, 2014
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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