Publication Date:
2017-03-02
Description:
Author(s): Sayre Christenson, Weiyu Xie, Yi-Yang Sun, and S. B. Zhang Defect tolerance can be critically important for optoelectronics. GaN, specifically, tolerates a relatively large concentration of threading dislocations, but the physical origin of this tolerance remains a mystery. First-principles calculations reveal the removal of deep-level states from edge disl… [Phys. Rev. B 95, 121201(R)] Published Wed Mar 01, 2017
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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