Publication Date:
2012-11-06
Description:
Author(s): L. M. C. Pereira, U. Wahl, J. G. Correia, S. Decoster, L. M. Amorim, M. R. da Silva, J. P. Araújo, and A. Vantomme We report on the lattice location of Mn in wurtzite GaN using β − emission channeling. In addition to the majority substituting for Ga, we locate up to 20% of the Mn atoms in N sites. We propose that the incorporation of Mn in N sites is enabled under sufficiently high concentrations of N vacancies, ... [Phys. Rev. B 86, 195202] Published Mon Nov 05, 2012
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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