Publication Date:
2011-06-24
Description:
Author(s): Masashi Shiraishi, Yoshiya Honda, Eiji Shikoh, Yoshishige Suzuki, Teruya Shinjo, Tomoyuki Sasaki, Tohru Oikawa, Kiyoshi Noguchi, and Toshio Suzuki A systematic investigation of spin transport properties in silicon at 8 K by using a nonlocal geometry is presented. The spin injection signal in the nonlocal scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precessi... [Phys. Rev. B 83, 241204] Published Thu Jun 23, 2011
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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