Publication Date:
2017-03-18
Description:
Author(s): Ayako Ohmura, Yuichiro Higuchi, Takayuki Ochiai, Manabu Kanou, Fumihiro Ishikawa, Satoshi Nakano, Atsuko Nakayama, Yuh Yamada, and Takao Sasagawa We performed x-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase transition in BiTeBr having a noncentrosymmetric layered structure (… [Phys. Rev. B 95, 125203] Published Fri Mar 17, 2017
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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