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  • Other Sources  (25)
  • SOLID-STATE PHYSICS  (13)
  • SPACE SCIENCES  (12)
  • Analytical Chemistry and Spectroscopy
  • 1
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    Surface electrical properties experiment (1973)
    In:  CASI
    Details
    Publication Date: 2006-01-11
    Description: The surface electrical properties (SEP) experiment was used to explore the subsurface material of the Apollo 17 landing site by means of electromagnetic radiation. The experiment was designed to detect electrical layering, discrete scattering bodies, and the possible presence of water. From the analysis of the data, it was expected that values of the electrical properties (dielectric constant and loss tangent) of lunar material in situ would be obtained. The basic principle of the SEP experiment is interferometry. This principle involves only the interference of two or more waves to produce an interference pattern. The inversion of the interference pattern in terms of the spatial distribution of the electrical properties is the basic aim of the experiment (fig. 15-1). The experiment is most easily understood in terms of a single dipole antenna for radiating electromagnetic energy and a loop receiver for measuring the magnitudes of the fields.
    Keywords: SPACE SCIENCES
    Type: NASA. Johnson Space Center Apollo 17 Prelim. Sci. Rept.; 14 p
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  • 2
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    Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Results are presented from finite element analysis of the Czochralski (CZ) and Liquid Encapsulated Czochralski (LEC) crystal growth processes based on a thermal-capillary model which governs the heat transfer in the system simultaneously with setting the shapes of the melt/solid interface, the melt and encapsulant menisci, and the radius of a steadily growing crystal. Calculations are performed for the small-scale growth of silicon (CZ) and gallium arsenide (LEC). The effects of melt volume and crucible position relative to the heater on the radius of the crystal and the shape of the melt/solid interface are predicted for the CZ system, and the importance of including an accurate representation of the melt meniscus for modeling the process is demonstrated. The additional effect of an encapsulant layer on heat transfer is treated for the LEC method for the cases of totally transparent and opaque encapsulant. The responses of these LEC prototype systems are examined for changes in pull rate and encapsulant volume.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 74; 605-624
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  • 3
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    Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategies (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 75; 227-240
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  • 4
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    Thermal-capillary analysis of small-scale floating zones Steady-state calculations (1986)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Galerkin finite element analysis of a thermal-capillary model of the floating zone crystal growth process is used to predict the dependence of molten zone shape on operating conditions for the growth of small silicon boules. The model accounts for conduction-dominated heat transport in the melt, feed rod and growing crystal and for radiation between these phases, the ambient and a heater. Surface tension acting on the shape of the melt/gas meniscus counteracts gravity to set the shape of the molten zone. The maximum diameter of the growing crystal is set by the dewetting of the melt from the feed rod when the crystal radius is large. Calculations with small Bond number show the increased zone lengths possible for growth in a microgravity environment. The sensitivity of the method to the shape and intensity of the applied heating distribution is demonstrated. The calculations are compared with experimental observations.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 75; 367-389
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  • 5
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    Fluid mechanics and mass transfer in melt crystal growth: Analysis of the floating zone and vertical Bridgman processes (1986)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: This research program focuses on analysis of the transport mechanisms in solidification processes, especially one of interest to the Microgravity Sciences and Applications Program of NASA. Research during the last year has focused on analysis of the dynamics of the floating zone process for growth of small-scale crystals, on studies of the effect of applied magnetic fields on convection and solute segregation in directional solidification, and on the dynamics of microscopic cell formation in two-dimensional solidification of binary alloys. Significant findings are given.
    Keywords: SOLID-STATE PHYSICS
    Type: The materials processing research base of the Materials Processing Center; p 27-48
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  • 6
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    Thermal-capillary model for Czochralski growth of semiconductor materials (1985)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: The success of efficiently calculating the temperature field, crystal radius, melt mensicus, and melt/solid interface in the Czochralski crystal growth system by full finite-element solution of the government thermal-capillary model is demonstrated. The model predicts realistic response to changes in pull rate, melt volume, and the thermal field. The experimentally observed phenomena of interface flipping, bumping, and the difficulty maintaining steady-state growth as the melt depth decreases are explained by model results. These calculations will form the basis for the first quantitative picture of Cz crystal growth. The accurate depiction of the melt meniscus is important in calculating the crystal radius and solidification interface. The sensitivity of the results to the equilibrium growth angle place doubt on less sophisticated attempts to model the process without inclusion of the meniscus. Quantitative comparison with experiments should be possible once more representation of the radiation and view factors in the thermal system and the crucible are included. Extensions of the model in these directions are underway.
    Keywords: SOLID-STATE PHYSICS
    Type: JPL Proceedings of the Flat-Plate Solar Array Project Workshop; p 195-214
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  • 7
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    Mathematical Modelling of High-speed Ribbbon Systems: a Case Study of Edge-defined Film-fed Growth (1984)
    In:  CASI
    Details
    Publication Date: 2014-09-12
    Description: Finite element numerical analysis was used to solve the coupled problem of heat transfer and capillarity to describe low and high speed silicon sheet growth in meniscus defined systems. Heat transfer models which neglect the details of convective heat flow in the melt are used to establish operating limits for an EFG system in terms of the growth rate, die temperature and the static head acting on the meniscus. It is shown that convective heat transfer in the melt becomes important only at high growth rates or for materials with low thermal conductivities.
    Keywords: SOLID-STATE PHYSICS
    Type: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells; p 311-329
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  • 8
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    Fluid flow in crystallization processes (1982)
    In:  Other Sources
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    Publication Date: 2011-08-18
    Description: Investigations of the interactions of heat, mass, and momentum transport in crystal growth from the melt are described. Studies of the mall-scale floating zone process and on a prototype of the vertical Bridgman growth system were emphasized. In both systems detailed numerical calculations are used to dissect the interplay between fluid convection and dopant segregation. These calculations are based on finite element techniques that make feasible the complete solution of solidification problems which include convection. Other numerical methods were developed for solving thermal models of crystal growth processes with melt/gas menisci and for simulating the microscale instabilities in solidification interfaces.
    Keywords: SOLID-STATE PHYSICS
    Type: The Mater. Process. Res. Base of the Mater. Process. Center; p 97-116
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  • 9
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    Radial segregation induced by natural convection and melt/solid interface shape in vertical Bridgman growth (1983)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The roles of natural convection in the melt and the shape of the melt/solid interface on radial dopant segregation are analyzed for a prototype of vertical Bridgman crystal growth system by finite element methods that solve simultaneously for the velocity field in the melt, the shape of the solidification isotherm, and the temperature distribution in both phases. Results are presented for crystal and melt with thermophysical properties similar to those of gallium-doped germanium in Bridgman configurations with melt below (thermally destabilizing) and above (stabilizing) the crystal. Steady axisymmetric flow are classified according to Rayleigh number as either being nearly the growth velocity, having a weak cellular structure or having large amplitude cellular convention. The flows in the two Bridgman configurations are driven by different temperature gradients and are in opposite directions. Finite element calculations for the transport of a dilute dopant by these flow fields reveal radial segregation levels as large as sixty percent of the mean concentration. Segregation is found most severe at an intermediate value of Rayleigh number above which the dopant distribution along the interface levels as the intensity of the flow increases.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-173627 , NAS 1.26:173627
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  • 10
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    Apollo 15 green glasses. (1973)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: The samples analyzed include 28 spheres, portions of spheres, and angular fragments from soil 15101. Emerald green glasses from other soils are identical to those from 15101. The composition of the green glass is unlike that of any other major lunar glass group. The Fe content is comparable to that in mare basalts, but Ti is much lower. The Mg content is much higher than in most lunar materials analyzed to date, and the Cr content is also high. The low Al content is comparable to that of mare basalt glasses.
    Keywords: SPACE SCIENCES
    Type: Physics of the Earth and Planetary Interiors; 7; June 197
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