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  • 1
    Publication Date: 2011-08-24
    Description: An ellipsometric study of ambient-reaction-produced BaCO3 overlayer growth on laser-ablated YBCO is presented as a function of time. The effects of the anisotropy of YBCO on the ellipsometric data inversion process are discussed, and it is concluded that with certain restrictions on the data acquisition method, the anisotropic substrate can be adequately modeled by its isotropic pseudodielectric function for the purpose of overlayer thickness estimation. It is found that after an initial period of rapid growth attributed to the chemical reaction of the exposed surface bonds, the BaCO3 overlayer growth is linear at 1-2 A per day. This slow growth rate is attributed to the complexity of the BaCO3-forming reaction, together with the need for ambient reactants to diffuse through the overlayer.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 73; 9; p. 4357-4361.
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  • 2
    Publication Date: 2011-08-19
    Description: The millimeter-wave surface resistance of YBa2Cu3O(7-delta) superconducting films was measured in a gold-plated copper host cavity at 58.6 GHz between 25 and 300 K. High-quality laser-ablated films of 1.2-micron thickness were deposited on SrTiO3 and LaGaO3 substrates. Their transition temperatures were 90.0 and 88.9 K, with a surface resistance at 70 K of 82 and 116 milliohms, respectively. These values are better than the values for the gold-plated cavity at the same temperature and frequency.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 57; 1058-106
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  • 3
    Publication Date: 2011-08-19
    Description: A low-frequency plasma deposition system was used to prepare amorphous hydrogenated carbon (a-C:H) films. The growth energy was varied by changing the power and/or pressure of the plasma. Ellipsometry and optical absorption were used to obtain the optical energy gap, the density of states, and the refractive index. Ion sputtering was used in conjunction with ellipsometry and Auger electron spectroscopy to get absolute sputtering rates. The plasma deposited a-C:H is amorphous with an optical energy gap of approximately 2.0-2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index, and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement with, and give a fine-tuned positive confirmation to, an existing conjecture on the nature of the a-C:H films (Kaplan et al., 1985).
    Keywords: SOLID-STATE PHYSICS
    Type: Electrochemical Society, Journal (ISSN 0013-4651); 133; 2339-234
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  • 4
    Publication Date: 2011-08-19
    Description: The epitaxial growth of 100-262.5-nm SrF2 films on n-type and p-type (100)InP in a conventional baked UHV system at base pressure about 200 ptorr, temperature 250-350 C, and growth rate from less than 100 to about 200 pm/s. Substrates are chemicomechanically polished, degreased, bombarded with 500-eV Ar ions for 3-4 min at 350 C, and annealed for 23-30 min at 350 C, producing a slightly In-rich (In/P = 1.02) In-island-free surface with a (4 x 1) or (1 x 1) LEED structure. Films grown at 350 C and less than 100 pm/s are found to be smooth and free of cracks in most cases, with a highly faceted (1 x 1) LEED structure. The electrical properties of the SrF2 films are found to be acceptable only when the ohmic contacts are applied prior to the substrate prior to SrF2 growth.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Vacuum Science and Technology A (ISSN 0734-2101); 4; 897-899
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  • 5
    Publication Date: 2011-08-19
    Description: Amorphous hydrogenated carbon films were grown on GaAs, InP and fused silica substrates using plasmas generated from hydrocarbon gases. Methane and n-butane sources were utilized. The effects of flow rate and power density on film growth were investigated. Carbon was the major constituent in the films. The degree of asymmetry at the carbon-semiconductor interface was approximately independent of the power density. Different H-C bonding configurations were detected by the technique of secondary-ion mass spectrometry. Band gaps up to 3 eV were obtained from optical absorption studies. Breakdown strengths as high as 600 MV/m were measured.
    Keywords: SOLID-STATE PHYSICS
    Type: Thin Solid Films (ISSN 0040-6090); 157; 97-104
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  • 6
    Publication Date: 2011-08-19
    Description: Electromigration failure in highly oriented YBa2Cu3O(7-x) thin films below the superconducting transition temperature is reported here for the first time. The film on SrTiO3 failed at 86 K, 230,000 A/sq cm, while that on LaAlO3 failed at 84 K, 930,000 A/sq cm. Scanning electron microscopy and energy dispersive X-ray analysis of the films after failure shows that Cu migrates preferentially away from the failure region toward the electrode.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 58; 759-761
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  • 7
    Publication Date: 2013-08-31
    Description: The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA, Goddard Space Flight Center, AMSAHTS 1990: Advances in Materials Science and Applications of High Temperature Superconductors; p 26
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  • 8
    Publication Date: 2013-08-31
    Description: Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.
    Keywords: SOLID-STATE PHYSICS
    Type: Solid State Technology Branch of NASA Lewis Research Center; p 135-137
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  • 9
    Publication Date: 2011-08-19
    Description: The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Vacuum Science and Technology A (ISSN 0734-2101); 3; 900-903
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  • 10
    Publication Date: 2013-08-31
    Description: The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response of laser ablated YBa2Cu3O(7-delta)/LaAlO3 thin films was studied as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA. Goddard Space Flight Center, AMSAHTS 1990: Advances in Materials Science and Applications of High Temperature Superconductors; p 261-269
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