Publication Date:
2011-08-18
Description:
In situ monitoring of the layer thickness during liquid phase electroepitaxy (LPEE) was achieved with a submicron resolution through precise resistance measurements. The new approach to the study and control of LPEE was applied to growth of undoped and Ge-doped GaAs layers. The in situ determined growth kinetics was found to be in excellent agreement with theory.
Keywords:
SOLID-STATE PHYSICS
Type:
Electrochemical Society; vol. 129
Format:
text
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