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  • 1
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    Plastic deformation of silicon dendritic web ribbons during the growth (1984)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The distribution of slip dislocations in silicon dendritic web ribbons due to plastic deformation during the cooling phase of the growth was studied. The results show the existence of two distinguishable stress regions across the ribbon formed during the plastic deformation stage, namely, shear stress at the ribbon edges and tensile stress at the middle. In addition, slip dislocations caused by shear stress near the edges appear to originate at the twin plane.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 70; 314-318
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Directional solidification of silicon in carbon crucibles by an oscillating crucible technique (1982)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The quality of silicon cast by present techniques is limited by the presence of dislocations and grain boundaries in unseeded growth and by cellular structures with dislocation networks in the case of the seeded growth. To address these concerns, a new method of directional solidification called the oscillating crucible technique (OCT) is developed. During growth, a carbon crucible is oscillated to provide for effective stirring of the melt. This growth technique (seeded growth only), along with material characterization and solar-cell fabrication and testing, is described. Solar-cell efficiencies of up to 13 percent at 100 mW/sq cm area obtained in the single crystalline areas. Minority-carrier diffusion lengths exceeding 100 microns are measured even in the polycrystalline areas of the wafers. Limitations of the present setup and possible future improvements are discussed.
    Keywords: SOLID-STATE PHYSICS
    Format: text
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  • 3
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    Proceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells (1984)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Theoretical and experimental phenomena, applications, and characterization including stress/strain and other problem areas that limit the rate of growth of crystals suitable for processing into efficient, cost-effective solar cells are discussed. Melt spinning, ribbon growth, rapid solidification, laser recrystallization, and ignot growth of silicon and metals are also discussed.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-173746 , JPL-PUB-84-23 , DOE/JPL-1012-95 , NAS 1.26:173746 , DE84-014619 , Jul 25, 1983 - Jul 27, 1983; Port St. Lucie, FL; United States
    Format: application/pdf
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  • 4
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    Effects of radiation damage on the silicon lattice (1987)
    In:  Other Sources
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    Publication Date: 2019-07-13
    Description: Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.
    Keywords: SOLID-STATE PHYSICS
    Type: IEEE Photovoltaic Specialists Conference; May 04, 1987 - May 08, 1987; New Orleans, LA; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 5
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    Minority carrier diffusion lengths and absorption coefficients in silicon sheet material (1980)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.
    Keywords: SOLID-STATE PHYSICS
    Type: Seminar on Role of electro-optics in photovoltaic energy conversion; Jul 31, 1980 - Aug 01, 1980; San Diego, CA
    Format: text
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