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High-temperature ohmic contact to n-type 6H-SiC using nickel (1995)

Crofton, J. ; Williams, J. R. ; Bozack, M. J. ; [et al.]

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Publication Date: 2019-08-28

Description: Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 C and yielded values less than 5 x 10(exp -6) ohm sq cm at both temperatures. The trend shows a decreasing contact resistance at higher temperature. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer.

Keywords: SOLID-STATE PHYSICS

Type: Journal of Applied Physics (ISSN 0021-8979); 77; 3; p. 1317-1319

Format: text

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