Publication Date:
2014-09-12
Description:
High growth rates which are the key to a successful low cost silicon ribbon technology is discussed. The heat of fusion is conducted along the grown ribbon for some distance before it can be dissipated. The conduction path is limited to the cross sectional area of the ribbon, since the solid-liquid interface is perpendicular to the pull direction. Horizontal ribbon growth is achieved by providing an extended solidification interface, parallel within a few degrees, to the pull direction. The heat of fusion need only be conducted through the thickness of the ribbon and is dissipated from the upper surface which comprises an area equal to the interface. Growth of up to 15cm wide ribbon and continuous growth of ribbons as long as 120 meters is demonstrated. Areal productivity as high as 2.7 sq/m/hr is shown for a single 15 cm ribbon, while typical values of approximately 1 sq/m/hr are obtained in the growth of 5 cm ribbon.
Keywords:
SOLID-STATE PHYSICS
Type:
JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells; p 297-307
Format:
text
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