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  • 1
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    Unknown
    Electrochemical etching of the semiconductor lead tin telluride (1984)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Convective currents during the Bridgman growth of a compound semiconductor lead to temperature fluctuations at the solid-liquid interface. These temperature fluctuations in turn lead to microscopic compositional variations in the solid. Electrochemical principles have been applied to develop three etches which delineate the variations in the compound semiconductor, lead tin telluride, and allow optical studies of the growth kinetics of this material. Use of these etches has shown periodic lines during the initial growth, with indications of oscillatory instabilities developing in later stages of growth, and, finally, complete breakdown of the interface.
    Keywords: SOLID-STATE PHYSICS
    Type: Electrochemical Society, Journal (ISSN 0013-4651); 131; 2803-280
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Unknown
    A procedure to visualize the melt-solid interface in Bridgman grown germanium and lead tin telluride (1986)
    In:  Other Sources
    Details
    Publication Date: 2019-08-28
    Description: An X-ray and gamma-ray analysis technique has been developed which makes it possible to observe the melt solid interface during semiconductor crystal growth in a Bridgman furnace. Experiments have been carried out to observe the interface movement and shape in germanium as well as in lead tin telluride by means of the new method, and the results are discussed in detail. X-ray and gamma-ray radiographs of the melt-solid interfaces in the two semiconductor crystal specimens, are provided.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 74; 228-230
    Format: text
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    NASA TECHNICAL REPORTS
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