Publication Date:
2019-06-27
Description:
Silicon with thermally-grown oxide overlayers in the thickness range 15-89 A is studied by angular-dependent XPS. Electron attenuation lengths at 1382 eV are found to be 37 plus or minus 4 A in SiO2 and 27 plus or minus 6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.
Keywords:
SOLID-STATE PHYSICS
Type:
Chemical Physics Letters; 44; Dec. 1
Format:
text
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