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  • 1
    ISSN: 1573-7691
    Keywords: Domain decomposition ; nested dissection ; LU-factorization ; time integration ; Newton's method ; spectral elements ; finite elements
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Abstract Domain decomposition by nested dissection for concurrent factorization and storage (CFS) of asymmetric matrices is coupled with finite element and spectral element discretizations and with Newton's method to yield an algorithm for parallel solution of nonlinear initial-and boundary-value problem. The efficiency of the CFS algorithm implemented on a MIMD computer is demonstrated by analysis of the solution of the two-dimensional, Poisson equation discretized using both finite and spectral elements. Computation rates and speedups for the LU-decomposition algorithm, which is the most time consuming portion of the solution algorithm, scale with the number of processors. The spectral element discretization with high-order interpolating polynomials yields especially high speedups because the ratio of communication to computation is lower than for low-order finite element discretizations. The robustness of the parallel implementation of the finite-element/Newton algorithm is demonstrated by solution of steady and transient natural convection in a two-dimensional cavity, a standard test problem for low Prandtl number convection. Time integration is performed using a fully implicit algorithm with a modified Newton's method for solution of nonlinear equations at each time step. The efficiency of the CFS version of the finite-element/Newton algorithm compares well with a spectral element algorithm implemented on a MIMD computer using iterative matrix methods.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1573-7691
    Keywords: Domain decomposition ; nested dissection ; LU-factorization ; parallel computers ; MIMD
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Abstract A multilevel algorithm is presented for direct, parallel factorization of the large sparse matrices that arise from finite element and spectral element discretization of elliptic partial differential equations. Incomplete nested dissection and domain decomposition are used to distribute the domain among the processors and to organize the matrix into sections in which pivoting is applied to stabilize the factorization of indefinite equation sets. The algorithm is highly parallel and memory efficient; the efficient use of sparsity in the matrix allows the solution of larger problems as the number of processors is increased, and minimizes computations as well as the number and volume of communications among the processors. The number of messages and the total volume of messages passed during factorization, which are used as measures of algorithm efficiency, are reduced significantly compared to other algorithms. Factorization times are low and speedups high for implementation on an Intel iPSC/860 hypercube computer. Furthermore, the timings for forward and back substitutions are more than an order-of-magnitude smaller than the matrix decomposition times.
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 2011-08-19
    Description: A singular perturbation analysis valid for small grain-boundary slopes is used with the one-sided model for solidification to show that grain boundaries introduce imperfections into the symmetry of the developing cellular interfaces which rupture the junction between the family of planar shapes and the bifurcating cellular families. Undulating interfaces are shown to develop first near grain boundaries, and to evolve with decreasing temperature gradient either by a smooth transition from the almost planar family or by a sudden jump to moderate-amplitude cellular forms, depending on the growth rate.
    Keywords: SOLID-STATE PHYSICS
    Type: Physical Review B, 3rd Series (ISSN 0163-1829); 30; 3993-399
    Format: text
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  • 4
    Publication Date: 2019-08-28
    Description: The wide range of length and time scales involved in industrial scale solidification processes is demonstrated here by considering the Czochralski process for the growth of large diameter silicon crystals that become the substrate material for modern microelectronic devices. The scales range in time from microseconds to thousands of seconds and in space from microns to meters. The physics and chemistry needed to model processes on these different length scales are reviewed.
    Keywords: SOLID-STATE PHYSICS
    Type: In: Heat and mass transfer in materials processing (A93-10826 01-31); p. 137-153.
    Format: text
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  • 5
    Publication Date: 2019-07-12
    Description: Meniscus-defined techniques for the growth of thin silicon sheets fall into two categories: vertical and horizontal growth. The interactions of the temperature field and the crystal shape are analyzed for both methods using two-dimensional finite-element models which include heat transfer and capillarity. Heat transfer in vertical growth systems is dominated by conduction in the melt and the crystal, with almost flat melt/crystal interfaces that are perpendicular to the direction of growth. The high axial temperature gradients characteristic of vertical growth lead to high thermal stresses. The maximum growth rate is also limited by capillarity which can restrict the conduction of heat from the melt into the crystal. In horizontal growth the melt/crystal interface stretches across the surface of the melt pool many times the crystal thickness, and low growth rates are achievable with careful temperature control. With a moderate axial temperature gradient in the sheet a substantial portion of the latent heat conducts along the sheet and the surface of the melt pool becomes supercooled, leading to dendritic growth. The thermal supercooling is surpressed by lowering the axial gradient in the crystal; this configuration is the most desirable for the growth of high quality crystals. An expression derived from scaling analysis relating the growth rate and the crucible temperature is shown to be reliable for horizontal growth.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 82; 1-2; 1-9
    Format: text
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