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  • 1
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    Semiconductor superlattice photodetectors (1986)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Technical progress made in the study of superlattice photoconductors is summarized and papers submitted for publication are listed. Since the quantum-well regions may contain several subbands, each of which may be occupied by electrons depending on the doping concentrations, it is important to include the multi-subbands in calculating the impact ionization rate. The electrons occupying the higher subbands require a smaller amount of energy to get out of the quantum well; thus, those higher level subband electrons contribute significantly to the impact ionization rate. The results of the subbands have been calculated. Results concerning the nonparabolicity effect of the band structure, the effect of the quantum-well size, and the effect of the band-edge discontinuity and doping are also summarized.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-180300 , NAS 1.26:180300
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Semiconductor superlattice photodetectors (1986)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Superlattice photodetectors were investigated. A few major physical processes in the quantum-well heterostructures related to the photon detection and electron conduction mechanisms, the field effect on the wave functions and the energy levels of the electrons, and the optical absorption with and without the photon assistance were studied.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-180639 , NAS 1.26:180639
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
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    Semiconductor superlattice photodetectors (1986)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: During the past half-year, the research effort centered on further investigating both the new superlattice photomultiplier with tunneling-assisted impact ionization and the photodetector based on the real space transfer mechanism. A brief outline of the current status of these projects is presented. Detailed analyses are included in Appendices A and B. New results of the tunneling-assisted impact ionization are presented.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-179850 , NAS 1.26:179850
    Format: application/pdf
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  • 4
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    Impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures (1986)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Impact ionization across the band-edge discontinuity of quantum-well heterostructures is studied theoretically. A heterolayer structure of alternating Al(x)Ga(1-x)As and GaAs layers is considered where the GaAs layers are heavily doped with donors. Thus a large number of electrons is confined to the quantum-well region. Incident electrons are heated up by applied electric fields and collide with the electrons confined in the well regions. Both the ionization rate as a function of the incident energy, and average ionization rates are computed. Device applications of such multiple quantum-well structures and the possibility of a complete analog to the conventional photomultiplier are discussed.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 59; 2885-289
    Format: text
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