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  • 1
    Electronic Resource
    Electronic Resource
    Remote Plasma-Enhanced CVD of Fluorinated Silicon Nitride FilmsThe referees are thanked for their helpful and constructive comments on the original manuscript. (1997)
    Weinheim : Wiley-Blackwell
    Chemical Vapor Deposition 3 (1997), S. 111-117 
    Details
    ISSN: 0948-1907
    Keywords: Remote PECVD ; Silicon nitride ; Nitrogen trifluoride ; Hydrogen content ; Electrical properties ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: An investigation has been made of the effect of dilution of nitrogen with NF3 on the properties of silicon nitride deposited by remote plasma-enhanced CVD (PECVD). For NF3/N2 mixtures with 〈 1.5% NF3, fluorinated films with the structure of silicon nitride are formed but the total concentration of bonded hydrogen in the films decreases with increasing NF3 flow rate, which leads to an improvement of the electrical properties of the films compared with unfluorinated films. Such films could be of interest for device applications. For NF3/N2 mixtures with NF3 〉 1.5 %, films with the structure of silicon dioxide are formed, but they do not contain enough oxygen to give typical SiO2 IR spectra. It is suggested that the silicon dioxide structure arises because of isoelectronic substitution of oxygen by NF.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cvde.19970030302
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of silicon nitride films by remote plasma-enhanced chemical vapour deposition (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 301-312 
    Details
    ISSN: 1057-9257
    Keywords: Remote PECVD ; Capacitive coupling ; Silane ; Nitrogen ; Silicon nitride ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this paper we describe the growth of silicon nitride from nitrogen and silane for the first time by capacitively coupled remote PECVD. We report on the effect of process parameters on the composition and properties of the deposited films and we show that by adjustment of these parameters it is possible to produce high-quality material which could be of interest for electronic applications. Of particular note is that the growth rate is about one order of magnitude higher than any previously reported for nitride growth with remote PECVD using molecular nitrogen as the nitrogen source. We also discuss the mechanism of growth and propose that electron excitation of nitrogen and silane occurs in the gas phase, producing SiHx species which are adsorbed on the growing surface. The nitrogen is then incorporated into the layer by heterogeneous reaction.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020605
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