ISSN:
1057-9257
Keywords:
MOVPE
;
Quantum wells
;
ZnSe/ZnSxSe1 - x heterostructures
;
Gain
;
Excitons
;
Luminescence dynamics
;
Transfer processes
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Optically pumped stimulated emission in ZnSe/ZnSxSe1 - x heterostructures grown by MOVPE has been observed up to 170 K. Gain measurements have been performed using the variable stripe length method. The underlying gain mechanism at 25 K is atributed to an excitonexciton scattering process. Photoluminescence excitation spectra and the temporal evolution of the luminescence indicate a transfer process from the ZnSxSe1 - x barrier into the ZnSe active layer.
Additional Material:
6 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860030108
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