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  • Polymer and Materials Science  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 13-17 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Rutherford back-scattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) were used to characterize tungsten silicide (WSix) which had been chemical vapor deposited using higher-than-normal temperatures and a new reactant. Silicon wafers were subjected to a flowing mixture of dichlorosilane (SiH2Cl2) and tungsten hexafluoride (WF6) with temperatures ranging from 450°C to 650°C. The conventional process uses SiH4 and WF6 with temperatures from 250°C to 400°C.RBS analysis was performed on a matrix of samples produced to show silicon-to-tungsten ratios as functions of various deposition temperatures and reactant gas flow ratios. The Si/W ratios obtained ranged from 2.0 to 2.8 over the 450-650°C temperature range.SIMS analysis provided the chlorine and fluorine distributions in the WSix films, again as functions of various deposition temperatures and flow ratios. This data showed fluorine concentrations on the order of 1 × 1016- 4 × 1018 cm-3, which are far lower than those concentrations observed for the conventional WF6/SiH4 chemistry (about 1 × 1020 cm-3).
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 17 (1991), S. 22-24 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Titanium nitride films were deposited using various process parameters. The film stoichiomtery and the optical properties were than measured for all of the films. As expected, the stoichiometry is affected by the deposition rate and composition of the gas phase. We show that the index of refraction is affected by the substrate temperature as well as by the stoichiometry. We also show that as long as the amount of nitrogen in the film is above a critical value, the film is nitride-like. When the amount of nitrogen in the film drops below a critical value, the index of refraction is more characteristic of metallic titanium than titanium nitride.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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