ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
A multilayer insulator-metal-insulator capacitive structure was realized by plasma-enhanced chemical vapour deposition for a discharge frequency of 35 kHz. The chosen materials were amorphous hydrogenated silicon nitride as the insulator and tungsten as the metal. An interlayer of tungsten silicide used as an adhesion layer is deposited between W and a-SiNx:H. An AES depth profiling study coupled with high-resolution transmission electron microscopy observation showed the presence of interphases: the interfacial zone between a-SiNx:H and W is constituted by a WNx interphase ∼10 nm deep. Small crystallites are observed in tungsten-based materials. The presence of a mixed phase containing tungsten, silicon, nitrogen and a small amount of oxygen is obvious and noticed on the AES spectra at the WSix/a-SiNx:H interface: its thickness appears to be ∼7 nm.
Additional Material:
9 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740211202
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