ALBERT

Description: Knowledge of ion kinetics in plasma processing gas mixtures, such as CF4:Ar:O2, is important for understanding plasma assisted etching and deposition of materials. Ion energies and ion fluxes were measured in this mixture for 80:10:10, 60:20:20, and 40:30:30 mixture ratios in the pressure range of 10-50 mTorr, and at 200 and 300 W of RF power. Ions from plasma, sampled through a 10 micron orifice in the center of the lower plane electrode, were energy and mass analyzed by a combination of electrostatic energy and quadrupole mass filters. CFx(+) (x = 1 - 3), F2(+), F(+), C(+) from CF4, Ar(+) from Ar, and O2(+) and O(+) from O2, and by-product ions SiFx(+)(x = 1 - 3) from etching of quartz coupling window, COFx(+)(x = 1 - 3), CO(+), CO2(+), and OF(+) were detected. In all conditions ion flux decreases with increase of pressure but increase with increase of RF power. Ar(+) signal decreases with increase of pressure while CF3(+), which is the dominant ion at all conditions, increases with increase in pressure. The loss mechanism for Ar(+) and increase of CF3(+) is due to large cross section for Ar(+) + CF4 yields Ar + CF3(+) + F. Ion energies, which range from 15-25 eV depending on plasma operating conditions, are nearly Gaussian. By-product ion signals are higher at lower pressures indicating stronger plasma interaction with quartz window.

Description: Inductively coupled plasmas of CF4:Ar:O2, which have been of importance to material processing, were studied in the GEC cell at 80:10:10, 60:20:20, and 40:30:30 mixture ratios. Radial distributions of plasma potential (V(sub p)), electron and ion number densities (n(sub e) and n(sub i), electron temperature (T(sub e)), and electron energy distribution functions (EEDFs) were measured in the mid-plane of plasma across the electrodes in the pressure range of 10-50 mTorr, and RF (radio frequency) power of 200 and 300 W. V(sub p), n(sub e) and n(sub i), which peak in the center of the plasma, increase with decrease of pressure. T(sub e) also increases with pressure but peaks toward the electrode edge. Both V(sub p) and T(sub e) remain nearly independent of RF power, whereas n(sub e) and n(sub i) increase with power. In all conditions the EEDFs exhibit non-Maxwellian shape and are more like Druyvesteyn form at higher energies. They exhibit a broad dip in the energy range 0-10 eV suggesting an electron loss mechanism, which could be due to via resonance electron attachment processes producing negative ions in this rich electronegative gas mixture. This behavior is more prominent towards the electrode edge.

Description: Abstract Electron and ion energy distribution functions and other plasma parameters such as plasma potential (V(sub p)) , electron temperature (T(sub e)), and electron and ion number densities (n (sub e) and n(sub i)) in low pressure CF4 plasmas have been measured. The experiments were conducted in a GEC cell using an inductively coupled plasma (ICP) device powered by a 13.56 MHz radio-frequency (rf) power source. The measurements were made at 300 W of input rf power at 10, 30 and 50 mTorr gas pressures. Langmuir probe measurements suggest that n(sub e), n(sub i) and V(sub p) remain constant over 60% of the central electrode area, beyond which they decrease. Within the limits of experimental error (+/- 0.25 eV), T(sub e) remains nearly constant over the electrode area. T(sub e) and V(sub p) increase with a decrease in pressure. n(sub e) and n(sub i) are not affected as significantly as T(sub e) or V(sub p) by variation in the gas pressure. The electron energy distribution function (EEDF) measurements indicate a highly non-Maxwellian plasma. CF3+ is the most dominant ion product of the plasma, followed by CF2+ and CF+. The concentrations of CF2+ and CF+ are much larger than that is possible from direct electron impact ionization of the parent gas. The cross-section data suggest that the direct electron impact ionization of fragment neutrals and negative ion production by electron attachment may be responsible for increase of the minor ions.

Description: Plasma parameters, such as, electron number density (ne), electron temperature (Te), y electron energy distribution function (EEDF), mean electron energy (Ee), ion number density (ni), and plasma potential (Vp), have been measured by using Langmuir probe in low-pressure (10-50 mTorr) inductively coupled CHF3/Ar and CHF3/Ar/O2 plasmas generated in the GEC cell. The measurements were made at the center of the plasma, keeping the lower electrode grounded, for various CHF3/Ar and Ar/CHF3/O2 mixtures operating at 10-50 mTorr pressures and two input RF power levels, 200 and 300 W. EEDF data show a strong Druyvesteyn distribution with relatively lower number of low energy electrons as compared to a Maxwell distribution and a large electron population with energies higher than the plasma potential. The results further show that at low CHF3 concentrations (less than 50%) the electron number density remains nearly constant with increase in pressure. At higher CHF3 concentrations, however, it decreases with increase in pressure. Plasma potential and electron temperature increase with decrease in pressure and with increase in CHF3 concentration. An analysis of the above observations and mechanisms will be presented.

Description: Fluorocarbon gases, such as CF4, and their mixtures are widely used in contemporary low-pressure and high-density plasma processing techniques. In such plasmas Langmuir probe is one of the most commonly employed diagnostic techniques to obtain electron number density (ne), electron temperature (Te), electron energy distribution function (EEDF), mean electron energy (Ee), ion number density (ni), and plasma potential (Vp). In this paper we report probe data for planar inductively coupled plasmas in CF4/O2/Ar mixtures. By varying the relative concentrations in the mixture, radial profiles of ne, ni, Te, Ee, Vp, EEDF were measured in the mid-plane of the plasma at 10 mTorr and 20 mTorr of gas pressures, and 200 W and 300 W of RF powers. Data show that ne and ni decrease with increase of CF4 content and decrease of gas-pressure but they increase with increase of RF-power, whereas Vp increases with decrease of gas-pressure and remains independent of RF-power. However, they all peak at the center of the plasma and decrease towards the edge while Te follows the other way and increases a little with increase of power. The measured EEDFs exhibit Druyvesteyn-like distribution at all pressures and powers. Data are analyzed and will be presented.

Description: In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Description: The recently developed code SEMS (semiconductor equipment modeling software)is applied to the simulation of CF4 and CF4/Ar inductively coupled plasmas (ICP). This work builds upon the earlier nitrogen, transformer coupled plasma (TCP) SEMS research by demonstrating its accuracy for more complex reactive mixtures, moving closer to the realization of a virtual plasma reactor. Attention is given to the etching of and/or formation of carbonaceous films on the quartz dielectric window and diagnostic aperatures. The simulations are validated through comparisons with experimental measurements using FTIR (Fourier Transform Infrared) and UV absorption spectroscopy for CFx and SiFx neutral radicals, QMS (quadrupole mass spectrometry) for the ions, and Langmuir probe measurements of electron number density and temperature in an ICP GEC reference cell.

Description: Technological advancement in the microelectronics industry requires an understanding of the physical and chemical processes occurring in plasmas of fluorocarbon gases, such as carbon tetrafluoride (CF4) which is commonly used as an etchant, and their mixtures to optimize various operating parameters. In this paper we report data on electron number density (ne), electron temperature'(Te), electron energy distribution function (EEDF), mean electron energy, ion number density (ni), and plasma potential (Vp) measured by using Langmuir probe in an inductively coupled 13.56 MHz radio frequency plasmas generated in 50%Ar:50%CF4 mixture in the GEC cell. The probe data were recorded at various radial positions providing radial profiles of these plasma parameters at 10-50 mTorr pressures and 200 W and 300 W of RF power. Present measurements indicate that the electron and ion number densities increase with increase in pressure and power. Whereas the plasma potential and electron temperature decrease with increase in pressure, and they weakly depend on RF power. The radial profiles exhibit that the electron and ion number densities and the plasma potential peak at the center of the plasma with an exponential fall away from it, while the electron temperature has a minimum at the center and it increases steadily towards the electrode edge. The EEDFs have a characteristic drop near the low energy end at all pressures and pressures and their shapes represent non-Maxwellian plasma and exhibit more like Druyvesteyn energy distribution.v

Description: Low-temperature or cold plasmas have been shown to be effective for the sterilization of sensitive medical devices and electronic equipment. Low-temperature plasma sterilization procedures possess certain advantages over other protocols such as ethylene oxide, gamma radiation, and heat due to the use of inexpensive reagents, the insignificant environmental impacts and the low energy requirements. In addition, plasmas may also be more efficacious in the removal of robust microorganisms due to their higher chemical reactivity. Together, these attributes render cold plasma sterilization as ideal for the surface decontamination requirements for NASA Planetary Protection. Hence, the work described in this study involves the construction, characterization, and application of an inductively-coupled, RF powered oxygen (O2) plasma.

Description: Inductively coupled plasmas of CF4:Ar:O2, which have been of importance to material processing, were studied in the GEC cell at 80:10:10, 60:20:20, and 40:30:30 mixture ratios. Radial distributions of plasma potential (V(sub p)), electron and ion number densities (n(sub e) and n(sub i)), electron temperature (T(sub e)), and electron energy distribution functions (EEDFs) were measured in the mid-plane of plasma across the electrodes in the pressure range of 10-50 mTorr, and RF power of 200 and 300 W. V(sub p), n(sub e) and n(sub i), which peak in the center of the plasma, increase with decrease of pressure. T(sub e) also increases with pressure but peaks toward the electrode edge. Both V(sub p) and T(sub e) remain nearly independent of RF power, whereas n(sub e) and n(sub i) increase with power. In all conditions the EEDFs exhibit non-Maxwellian shape and are more like Druyvesteyn form at higher energies. They exhibit a broad lip in the energy range 0-10 eV suggesting an electron loss mechanism, which could be due to via resonance electron attachment processes producing negative ions in this rich electronegative gas mixture. This behavior is more prominent towards the electrode edge.