ISSN:
1432-2153
Keywords:
Shear stress and strain
;
Partial dislocations
;
Stacking faults
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
,
Technology
Notes:
Abstract A mechanism responsible for the high speed shear relaxation immediately behind shock fronts is suggested. The shear stress generated by the shock front causes the growth of two-dimensional defects in the crystal lattice, known as stacking faults (SF). Increasing the SF concentration and area leads to the absorption of impact energy. A breach of the lattice symmetry due to the SF presence causes an additional shift in peaks of the x-ray diffraction pattern obtained from the shock compressed material. Thus pulse x-ray diffraction is the only method that experimentally measures both the dilatational and deviatoric components of the deformation, which takes place during shock wave passage.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01415899
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