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  • 1
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    Gravitational effects of process-induced dislocations in silicon (1974)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Matters pertaining to semiconductor device fabrication were studied in terms of the influence of gravity on the production of dislocations in silicon wafers during thermal cycling in a controlled ambient where no impurities are present and oxidation is minimal. Both n-type and p-type silicon wafers having a diameter of 1.25 in to 1.5 in, with fixed orientation and resistivity values, were used. The surface dislocation densities were measured quantitatively by the Sirtl etch technique. The results show two significant features of the plastic flow phenomenon as it is related to gravitational stress: (1) the density of dislocations generated during a given thermal cycle is directly related to the duration of the cycle; and (2) the duration of the thermal cycle required to produce a given dislocation density is inversely related to the equilibrium temperature. Analysis of the results indicates that gravitational stress is instrumental in process-induced defect generation.
    Keywords: PHYSICS, SOLID-STATE
    Type: NASA-CR-120477
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Gravitational effects on process-induced defects in single crystal silicon (1974)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Description and discussion of a series of experiments which vary each of several important processing parameters including wafer orientation, temperature, gravity greater than 1 g, and ultimately zero gravity. These experiments are in progress and results to date are included from experiments which control temperature, duration of thermal cycle, and wafer orientation during 1 g processing. Preliminary evidence is presented which indicates that gravitational stresses play a role in defect generation during processing at 1 g.
    Keywords: PHYSICS, SOLID-STATE
    Type: AIAA PAPER 74-647 , Thermophysics and Heat Transfer Conference; Jul 15, 1974 - Jul 17, 1974; Boston, MA
    Format: text
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    NASA TECHNICAL REPORTS
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