Publication Date:
2019-07-13
Description:
Epitaxial growth of n-type layers of gallium antimonide from liquid phase on p-type substrates, discussing growing process applications and advantages
Keywords:
PHYSICS, SOLID-STATE
Type:
ELECTRONIC MATERIALS CONFERENCE; Aug 28, 1967 - Aug 30, 1967; NEW YORK, NY|; OFYSISKE PUBLIKASJON
Format:
text
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