Publication Date:
2019-07-13
Description:
Recent advances in the application of the edge-defined, film-fed growth (EFG) method to silicon ribbon are described. Ribbons up to 2 x 40 cm and 1 x 70 cm in width and length, respectively, have been grown at rates of 1 to 2.5 cm/min. The electrical properties of typical undoped ribbons are resistivity of 0.5 to 5 ohm-cm p-type, and hole mobility of 200 to 350 sq cm/V-sec. Ribbon growth speeds are consistent with the use of EFG silicon for terrestrial power.
Keywords:
PHYSICS, SOLID-STATE
Type:
Photovoltaic Specialists Conference; Nov 13, 1973 - Nov 15, 1973; Palo Alto, CA
Format:
text
Permalink