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Exciton line broadening in strained InGaAs/GaAs single quantum wells (1995)

Shen, W. Z. ; Tang, W. G. ; Li, Z. Y. ; [et al.]

Springer

Applied physics 60 (1995), S. 243-245

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ISSN: 1432-0630

Keywords: PACS: 78.65; 73.40. L4

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract . We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum–Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratio Q c=0.70±0.05. The strength of the exciton–phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01538398

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