ISSN:
1432-0630
Keywords:
PACS: 71.55.E; 72.40
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using light-radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first reported. The deposition temperature is 950 °C, about 100 °C lower than that in normal rf-heating MOCVD growth. The FWHM of GaN (0002) peak of the X-ray diffraction rocking curve is 8.7 arc min. Photoluminescence spectrum of GaN film shows that there is a very strong band-edge emission and no “yellow-band” luminescence. Hall measurement indicates that the n-type background carrier concentration of GaN film is 1.7×1018 cm-3 and the Hall mobility of it is 121.5 cm2/V s. It is suggested that the radiation of light in GaN growth enhances the dissociation of ammonia and decreases the disadvantages of the parasite reaction between trimethylgallium and ammonia.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050946
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