Publication Date:
2004-12-04
Description:
Some conclusions reached are as follow. Ge:Be detectors provide lower Noise Equivalent Power (NEP) and higher responsivities than state of the art Ge:Ga detectors at 42 microns. Reliable Be doping was achieved with Czochralski growth from a carbon susceptor under vacuum. The photoconductive behavior of Ge:Be detectors is strongly influenced by the concentration of residual shallow impurities. Optimization of Ge:Be detectors requires both a low concentration and precise compensation of shallow acceptors.
Keywords:
OPTICS
Type:
NASA. Ames Research Center, Infrared Detector Technology Workshop; 10 p
Format:
text
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