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  • 1
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    Detection of Chamber Conditioning Through Optical Emission and Impedance Measurements (2001)
    In:  Other Sources
    Details
    Publication Date: 2019-07-17
    Description: During oxide etch processes, buildup of fluorocarbon residues on reactor sidewalls can cause run-to-run drift and will necessitate some time for conditioning and seasoning of the reactor. Though diagnostics can be applied to study and understand these phenomena, many of them are not practical for use in an industrial reactor. For instance, measurements of ion fluxes and energy by mass spectrometry show that the buildup of insulating fluorocarbon films on the reactor surface will cause a shift in both ion energy and current in an argon plasma. However, such a device cannot be easily integrated into a processing system. The shift in ion energy and flux will be accompanied by an increase in the capacitance of the plasma sheath. The shift in sheath capacitance can be easily measured by a common commercially available impedance probe placed on the inductive coil. A buildup of film on the chamber wall is expected to affect the production of fluorocarbon radicals, and thus the presence of such species in the optical emission spectrum of the plasma can be monitored as well. These two techniques are employed on a GEC (Gaseous Electronics Conference) Reference Cell to assess the validity of optical emission and impedance monitoring as a metric of chamber conditioning. These techniques are applied to experimental runs with CHF3 and CHF3/O2/Ar plasmas, with intermediate monitoring of pure argon plasmas as a reference case for chamber conditions.
    Keywords: Nuclear Physics
    Type: American Vacuum Society Conference and Microelectronics and Interfaces; Feb 05, 2001 - Feb 09, 2001; Santa Clara, CA; United States
    Format: text
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  • 2
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    Plasma Reactor Modeling and Validation Experiments (2001)
    In:  Other Sources
    Details
    Publication Date: 2019-07-17
    Description: Plasma processing is a key processing stop in integrated circuit manufacturing. Low pressure, high density plum reactors are widely used for etching and deposition. Inductively coupled plasma (ICP) source has become popular recently in many processing applications. In order to accelerate equipment and process design, an understanding of the physics and chemistry, particularly, plasma power coupling, plasma and processing uniformity and mechanism is important. This understanding is facilitated by comprehensive modeling and simulation as well as plasma diagnostics to provide the necessary data for model validation which are addressed in this presentation. We have developed a complete code for simulating an ICP reactor and the model consists of transport of electrons, ions, and neutrals, Poisson's equation, and Maxwell's equation along with gas flow and energy equations. Results will be presented for chlorine and fluorocarbon plasmas and compared with data from Langmuir probe, mass spectrometry and FTIR.
    Keywords: Nuclear Physics
    Type: IOP Congress; Mar 18, 2001 - Mar 21, 2001; Brighton; United Kingdom
    Format: text
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