ISSN:
1436-5073
Schlagwort(e):
backscattered electrons images
;
compositional contrast
;
Monte Carlo simulations
;
spatial resolution
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
Notizen:
Abstract In this work, we report on a theoretical study of the contrast formation at Si/SixGe1−x interfaces in backscattered electron images of a scanning electron microscope. The contrast at the heterointerface is calculated for different atomic concentrations (0 〈 × 〈 1) and energies (E0 = 10 and 20 keV). The electron scattering phenomenon is simulated by employing a Monte Carlo method by using a single scattering approach. The signal intensity close to the interface shows a peak on the alloy side and a dip on the Si side. We explain this phenomenon by using the diffusion theory of the backscattered electrons. The spatial resolution increases by decreasing the Si concentration in the alloy side and by decreasing the beam energy.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF01244551
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