Publication Date:
2018-06-26
Description:
Author(s): Sandeep Agarwal, Baomin Wang, Huali Yang, Pravarthana Dhanapal, Yuan Shen, Junling Wang, Hailong Wang, Jianhua Zhao, and Run-Wei Li Spin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In t... [Phys. Rev. B 97, 214427] Published Mon Jun 25, 2018
Keywords:
Magnetism
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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