Publication Date:
2019-08-28
Description:
Elemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegregation analysis of GaAs and InP. NIR dark file illumination in transmission mode makes it possible to detect submicron precipitates in semiinsulating GaAs.
Keywords:
MATERIALS PROCESSING
Type:
In: Crystal growth in space and related optical diagnostics; Proceedings of the Meeting, San Diego, CA, July 22, 23, 1991 (A93-33051 12-29); p. 140-146.
Format:
text
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