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  • MATERIALS PROCESSING  (4)
  • ELECTRONICS AND ELECTRICAL ENGINEERING  (3)
  • 1
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    High temperature superconductors for magnetic suspension applications (1994)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: High temperature superconductors (HTS) hold the promise for applications in magnetic levitation bearings, vibration damping, and torque coupling. Traditional magnetic suspension systems require active feedback and vibration controls in which power consumption and low frequency vibration are among the major engineering concerns. HTS materials have been demonstrated to be an enabling approach towards such problems due to their flux trapping properties. In our laboratory at TCSUH, we have been conducting a series of experiments to explore various mechanical applications using HTS. We have constructed a 30 lb. model flywheel levitated by a hybrid superconducting magnetic bearing (HSMB). We are also developing a levitated and vibration-dampled platform for high precision instrumentation. These applications would be ideal for space usages where ambient temperature is adequate for HTS to operate properly under greatly reduced cryogenic requirements. We will give a general overview of these potential applications and discuss the operating principles of the HTS devices we have developed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA. Langley Research Center, Second International Symposium on Magnetic Suspension Technology, Part 1; p 111-118
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Development and fabrication of improved power transistor switches (1976)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-135013
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
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    Development and fabrication of improved power transistor switches (1979)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-159524
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 4
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    A proposal for epitaxial thin film growth in outer space (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.
    Keywords: MATERIALS PROCESSING
    Type: Metallurgical Transactions A - Physical Metallurgy and Materials Science (ISSN 0360-2133); 19A; 2639-264
    Format: text
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    NASA TECHNICAL REPORTS
  • 5
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    Commercial aspects of epitaxial thin film growth in outer space (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.
    Keywords: MATERIALS PROCESSING
    Type: Space Congress; Apr 26, 1988 - Apr 29, 1988; Cocoa Beach, FL; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 6
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    Pressure dependence of the electrical properties of GaBi solidified in low gravity (1987)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Immiscible GaBi alloys were solidified during free fall in the NASA Marshall Space Flight Center drop tower, which provides about 4.5 seconds of low gravity. The electrical resistivity and magnetic susceptibility were measured as a function of pressure (up to 18 kbar) and temperature (300 K to 4.2 K) of drop tower (DT) and ground control (GC) samples prepared under identical conditions, except for gravity. At ambient pressure the electrical resistance of the DT sample exhibits a broad maximum at 100 K, while that of GC sample decreases rapidly as temperature decreases. Both DT and GC samples become superconducting at 7.7 K. However, a minor second superconducting phase with a transition temperature at 8.3 K is observed only in the DT samples.
    Keywords: MATERIALS PROCESSING
    Type: Materials processing in the reduced gravity environment of space; Dec 01, 1986 - Dec 03, 1986; Boston, MA; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 7
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    Epitaxial thin film growth in outer space (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.
    Keywords: MATERIALS PROCESSING
    Type: International Conference and Exhibition on the Commercial and Industrial Uses of Outer Space; Feb 21, 1988 - Feb 25, 1988; Montreux; Switzerland
    Format: text
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