Publication Date:
2019-08-26
Description:
We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 m as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/C.
Keywords:
Lasers and Masers
Type:
JPL-CL-16-0668
,
SPIE Photonics West; Feb 13, 2016 - Feb 18, 2016; San Francisco, CA; United States
Format:
text
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