Publication Date:
2013-08-31
Description:
Radiation effects caused by single cosmic ray particles have been studied for many years in radiobiological experiments for different biological objects and biological end-points. Additionally, single event effects in microelectronic devices have gained large interest. There are two fundamental mechanisms by which a single particle can cause radiation effects. On the one hand, a cosmic ray ion with high linear energy transfer can deposit a high dose along its path. On the other hand, in a nuclear collision, a high dose can be deposited by short range particles emitted from the target nucleus. In low earth orbits a large contribution to target fragmentation events originates from trapped protons which are encountered in the South Atlantic Anomaly. These protons have energies up to a few hundred MeV. We study the fragmentation of C, O and Si nuclei - the target nuclei of biological material and microelectronic devices - in nuclear collisions. Our aim is to measure production cross sections, energy spectra, emission directions and charge correlations of the emitted fragments. The present knowledge concerning these data is rather poor. M. Alurralde et al. have calculated cross sections and average energies of fragments produced from Si using the cascade-evaporation model. D.M. Ngo et al. have used the semiempirical cross section formula of Silberberg and Tsao to calculate fragment yields and the statistical model of Goldhaber to describe the reaction kinematics. Cross sections used in these models have uncertainties within a factor of two. Our data will help to test and improve existing models especially for energies below 300 MeV/nucleon. Charge correlations of fragments emitted in the same interaction are of particular importance, since high doses can be deposited if more than one heavy fragment with a short range is produced.
Keywords:
LIFE SCIENCES (GENERAL)
Type:
NASA. Ames Research Center, Minutes of the 12th Joint NASA(DARA-DLR Life Sciences Program Working Group Meeting; p 1-3
Format:
application/pdf
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