ISSN:
1433-075X
Keywords:
Key words GaN
;
Semiconductor nitrides
;
Spontaneous polarization
;
Strain
;
Piezoelectric polarization
;
AlGaN heterostructures
;
AlGaN/GaN MODFETs
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. Moreover, this material system with its favorable hetero-junctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approach the predicted values, this material system would also be very attractive for power switching devices. In addition to the premature breakdown, high concentration of defects, and inhomogeneities, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, following a succinct review of the progress that has been made, spontaneous and piezoelectric polarization effects and their impact on sample device-like hetero-structures will be treated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s100190050132
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